tn0601l, vn0606l/m, vn66afd siliconix s-52426erev. c, 14-apr-97 1 n-channel enhancement-mode mosfet transistors product summary part number v (br)dss min (v) r ds(on) max ( ) v gs(th) (v) i d (a) tn0601l 1.8 @ v gs = 10 v 0.5 to 2 0.47 vn0606l 60 3 @ v gs = 10 v 0.8 to 2 0.33 vn0606m 60 3 @ v gs = 10 v 0.8 to 2 0.39 vn66afd 3 @ v gs = 10 v 0.8 to 2.5 1.46 features benefits applications low on-resistance: 1.2 low threshold: <1.6 v low input capacitance: 35 pf fast switching speed: 9 ns low input and output leakage low offset voltage low-voltage operation easily driven without buffer high-speed circuits low error voltage direct logic-level interface: ttl/cmos drivers: relays, solenoids, lamps, hammers, displays, memories, transistors, etc. battery operated systems solid-state relays top view to-226aa (to-92) s d g 1 2 3 to-237 (tab drain) top view s d g 1 2 3 to-220sd (tab drain) top view tn0601l vn0606l vn0606m vn66afd 1 s d g 2 3 absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol tn0601l vn0606l vn0606m vn66afd b unit drain-source voltage v ds 60 60 60 60 v gate-source voltage v gs 20 30 30 30 v continuous drain current = i d 0.47 0.33 0.39 1.46 (t j = 150 c) = i d 0.29 0.21 0.25 0.92 a pulsed drain current a i dm 1.5 1.6 2 3 power dissipation = p d 0.8 0.8 1.0 15 w power dissipation = p d 0.32 0.32 0.4 6 w maximum junction-to-ambient r thja 156 156 125 c/w maximum junction-to-case r thjc 8.3 c/w operating junction and storage temperature range t j , t stg 55 to 150 c notes a. pulse width limited by maximum junction temperature. b. reference case for all temperature testing. updates to this data sheet may be obtained via facsimile by calling siliconix faxback, 1-408-970-5600. please request faxback document #70201.
tn0601l, vn0606l/m, vn66afd 2 siliconix s-52426erev. c, 14-apr-97 specifications a limits tn0601l vn0606l vn0606m vn66afd parameter symbol test conditions typ b min max min max min max unit static drain-source breakdown voltage v (br)dss v gs = 0 v, i d = 10 a 70 60 60 60 gate threshold voltage v gs(th) v ds = v gs , i d = 0.25 ma 1.6 0.5 2 v gate - threshold voltage v gs(th) v ds = v gs , i d = 1 ma 1.7 0.8 2 0.8 2.5 v ds = 0 v, v gs = 30 v 100 100 gate-body leakage i gss t c = 125 c 500 na v ds = 0 v, v gs = 20 v 10 v ds = 60 v, v gs = 0 v 10 t j = 125 c 500 zero gate voltagedrain current i dss v ds = 48 v, v gs = 0 v 1 1 a t j = 125 c 100 t c = 125 c 10 on state drain current c i d( ) v ds = 10 v, v gs = 4.5 v 0.5 0.25 a on - state drain current c i d(on) v ds = 10 v, v gs = 10 v 2.4 1 1.5 1.5 a v gs = 3.5 v, i d = 0.04 a 4 5 v gs = 4.5 v, i d = 0.25 a 2 3 t j = 125 c 3.8 6 drain source on resistance c r ds( ) v gs = 5 v, i d = 0.3 a 2.3 5 drain - source on - resistance c r ds(on) v gs = 10 v, i d = 0.5 a 1.2 3 t j = 125 c 2.3 6 v gs = 10 v, i d = 1 a 1.3 1.8 3 t c = 125 c 2.5 6 forward transconductance c g fs v ds = 10 v, i d = 0.5 a 350 200 170 170 common source output conductance c g os v ds = 10 v, i d = 0.1 a 0.3 ms dynamic input capacitance c iss v 25 v v 0v 35 60 50 50 output capacitance c oss v ds = 25 v , v gs = 0 v , f = 1 mhz 25 50 40 40 pf reverse transfer capacitance c rss 6 10 10 10 switching d turn-on time t on
25
8 15 10 15 ns turn-off time t off
9 15 10 15 ns notes a. t a = 25 c unless otherwise noted. vndq06 b. for design aid only, not subject to production testing. c. pulse test: pw 300 s duty cycle 2%. d. switching time is essentially independent of operating temperature.
tn0601l, vn0606l/m, vn66afd siliconix s-52426erev. c, 14-apr-97 3 typical characteristics (25 c unless otherwise noted) ohmic region characteristics output characteristics for low gate drive on-resistance vs. drain current normalized on-resistance vs. junction temperature transfer characteristics on-resistance vs. gate-to-source voltage v gs gate-source voltage (v) v gs gate-source voltage (v) drain current (a) i d drain current (ma) i d drain current (a) i d on-resistance ( r ds(on) v ds drain-to-source voltage (v) v ds drain-to-source voltage (v) i d drain current (a) t j junction temperature ( c) r ds(on) drain-source on-resistance (normalized) 2.0 v t j = 25 c 100 0 0.4 0.8 1.2 1.6 2.0 80 60 40 20 0 2.8 v 2.6 v 2.4 v 2.2 v 1.8 v v gs = 10 v 2.0 0123 45 1.6 1.2 0.8 0.4 0 v gs = 10 v 8 v 7 v 6 v 5 v 4 v 3 v t j = 25 c 1.0 0.8 0.6 0 02 10 0.4 0.2 468 125 c v ds = 15 v t j = 55 c 2.8 048121620 2.4 2.0 1.6 0 1.2 0.8 0.4 1.0 a t j = 25 c i d = 0.1 a 2.5 2.0 1.5 0 0 0.4 2.0 1.0 0.5 0.8 1.2 1.6 v gs = 10 v t j = 25 c 2.25 2.00 1.75 0.50 50 10 150 1.50 1.25 30 70 110 1.00 0.75 v gs = 10 v i d = 1.0 a 0.2 a 0.5 a 25 c r ds(on) drain-source on-resistance (
tn0601l, vn0606l/m, vn66afd 4 siliconix s-52426erev. c, 14-apr-97 typical characteristics (25 c unless otherwise noted) threshold region capacitance normalized effective transient thermal impedance, junction-to-ambient (to-226aa, to-237) gate charge load condition effects on switching normalized effective transient thermal impedance t 1 square wave pulse duration (sec) i d drain current (a) v ds drain-to-source voltage (v) v gs gate-to-source voltage (v) q g total gate charge (pc) drain current (ma) i d c capacitance (pf) gate-to-source voltage (v) v gs t switching time (ns) 10 1 0.01 0.5 0.1 1.0 1.5 2.0 v ds = 5 v 55 c 125 c t j = 150 c c oss 120 100 80 0 010 50 60 40 20 30 40 20 c rss v gs = 0 v f = 1 mhz 10 k duty cycle = 0.5 0.2 0.1 0.05 0.02 1 0.01 0.1 0.1 5 k 1 100 500 10 0.5 5 50 1 k 1. duty cycle, d = 2. per unit base = r thja = 156 c/w 3. t jm t a = p dm z thja (t) t 1 t 2 t 1 notes: p dm t 2 15.0 12.5 10.0 0 0 100 600 7.5 5.0 200 300 400 2.5 500 i d = 1.0 a 30 v 48 v 0.1 1 10 100 10 1 50 20 5 2 v dd = 25 v r g = 25 v gs = 0 to 10 v t d(off) t r t d(on) t f 25 c c iss single pulse 0.01
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